What are the responsibilities and job description for the Assistant Materials Scientist - MSD Nanoscale Magnetic & Electronic Heterostructures Group position at Argonne National Laboratory?
In the Nanoscale Magnetic and Electronic Heterostructure Group of the Materials Science Division (MSD) we aim to understand the novel and emergent behavior in nanoscale magnetic and electronic heterostructures. Our focus is on exploring fundamental science governing the behavior of novel materials for ultra-dense, fast synaptic memory for neuromorphic applications.
In this exciting opportunity, we are seeking an assistant materials scientist to contribute to this research to understand the underlying physics of spin and charge based memory materials using advanced in-situ transmission electron microscopy (TEM) methods. The materials and devices would consist of patterned multilayer magnetic thin films, ferroelectric materials such as Zr-doped HfO2, as well as novel quantum materials. Of particular interest is the exploration of time-resolved imaging of material behavior using advanced ultrafast electron microscopy techniques. The in-situ experiments will be driven by external electric fields and relevant optical stimuli. Although exceptional candidates in all areas of experimental condensed matter and materials physics will be considered, particular emphasis will be placed on expertise in materials and phenomena towards use-inspired research relevant to microelectronics. The candidate will be part of a highly interdisciplinary project involving X-ray scientists, physicists, materials scientists, and computational scientists to solve challenging problems in the microelectronics area.
Note: Synthesis of bulk materials, first-principles simulations/modeling, and organic or bio-related areas are not in consideration for this position.
In this position, you will:
Job Family
Research Development (RD)
Job Profile
Materials/Ceramics/Metallurgical 2
Worker Type
Regular
Time Type
Full time
As an equal employment opportunity and affirmative action employer, and in accordance with our core values of impact, safety, respect, integrity and teamwork, Argonne National Laboratory is committed to a diverse and inclusive workplace that fosters collaborative scientific discovery and innovation. In support of this commitment, Argonne encourages minorities, women, veterans and individuals with disabilities to apply for employment. Argonne considers all qualified applicants for employment without regard to age, ancestry, citizenship status, color, disability, gender, gender identity, gender expression, genetic information, marital status, national origin, pregnancy, race, religion, sexual orientation, veteran status or any other characteristic protected by law.
Argonne employees, and certain guest researchers and contractors, are subject to particular restrictions related to participation in Foreign Government Sponsored or Affiliated Activities, as defined and detailed in United States Department of Energy Order 486.1A. You will be asked to disclose any such participation in the application phase for review by Argonne's Legal Department.
All Argonne offers of employment are contingent upon a background check that includes an assessment of criminal conviction history conducted on an individualized and case-by-case basis. Please be advised that Argonne positions require upon hire (or may require in the future) for the individual be to obtain a government access authorization that involves additional background check requirements. Failure to obtain or maintain such government access authorization could result in the withdrawal of a job offer or future termination of employment.
In this exciting opportunity, we are seeking an assistant materials scientist to contribute to this research to understand the underlying physics of spin and charge based memory materials using advanced in-situ transmission electron microscopy (TEM) methods. The materials and devices would consist of patterned multilayer magnetic thin films, ferroelectric materials such as Zr-doped HfO2, as well as novel quantum materials. Of particular interest is the exploration of time-resolved imaging of material behavior using advanced ultrafast electron microscopy techniques. The in-situ experiments will be driven by external electric fields and relevant optical stimuli. Although exceptional candidates in all areas of experimental condensed matter and materials physics will be considered, particular emphasis will be placed on expertise in materials and phenomena towards use-inspired research relevant to microelectronics. The candidate will be part of a highly interdisciplinary project involving X-ray scientists, physicists, materials scientists, and computational scientists to solve challenging problems in the microelectronics area.
Note: Synthesis of bulk materials, first-principles simulations/modeling, and organic or bio-related areas are not in consideration for this position.
In this position, you will:
- Conduct experimental laboratory work with a variety of advanced characterization using TEM (4D-STEM, HR-TEM, compositional mapping (EDX/EELS)).
- Conduct transport property measurements using probe station.
- Think and work independently and effectively collaborate to conduct research in a highly interdisciplinary environment of materials scientists, physicists, and chemists
- A Ph.D. in Materials Science, Physics, or a related discipline with 1-3 years of experience
- A strong experimental and theoretical background in conducting in-situ electrical transport measurements applied to nanostructures
- Experience with thin film deposition, nanofabrication and patterning of devices
- Experience in thin film and nanostructure synthesis and lithographic patterning
- Ability to model Argonne’s core values of impact, safety, respect, integrity, and teamwork.
Job Family
Research Development (RD)
Job Profile
Materials/Ceramics/Metallurgical 2
Worker Type
Regular
Time Type
Full time
As an equal employment opportunity and affirmative action employer, and in accordance with our core values of impact, safety, respect, integrity and teamwork, Argonne National Laboratory is committed to a diverse and inclusive workplace that fosters collaborative scientific discovery and innovation. In support of this commitment, Argonne encourages minorities, women, veterans and individuals with disabilities to apply for employment. Argonne considers all qualified applicants for employment without regard to age, ancestry, citizenship status, color, disability, gender, gender identity, gender expression, genetic information, marital status, national origin, pregnancy, race, religion, sexual orientation, veteran status or any other characteristic protected by law.
Argonne employees, and certain guest researchers and contractors, are subject to particular restrictions related to participation in Foreign Government Sponsored or Affiliated Activities, as defined and detailed in United States Department of Energy Order 486.1A. You will be asked to disclose any such participation in the application phase for review by Argonne's Legal Department.
All Argonne offers of employment are contingent upon a background check that includes an assessment of criminal conviction history conducted on an individualized and case-by-case basis. Please be advised that Argonne positions require upon hire (or may require in the future) for the individual be to obtain a government access authorization that involves additional background check requirements. Failure to obtain or maintain such government access authorization could result in the withdrawal of a job offer or future termination of employment.
