What are the responsibilities and job description for the Kilby Labs RF Design Intern - GaN Power Amplifiers position at Texas Instruments?
The RF Design Intern role is within Kilby Labs, the central R&D organization of Texas Instruments (TI). The lab is chartered to develop novel and innovative technologies and strategies for new business opportunities, drive next generation, differentiated technologies for existing businesses and recruit top technical talent for TI.
Responsibilities may include :
Design of RF and mmWave Power Amplifiers using cutting edge GaN processes technology
Analyzing trade-offs involved in designing different Power Amplifier classes and configurations
Device small signal model extractions, waveform engineering for high efficiency design, stability and reliability analysis
System analysis, device selection, circuit layout and electromagnetic co-simulations
Why TI?
Engineer your future. We empower our employees to truly own their career and development. Come collaborate with some of the smartest people in the world to shape the future of electronics.
We're different by design. Diverse backgrounds and perspectives are what push innovation forward and what make TI stronger. We value each and every voice, and look forward to hearing yours. Meet the people of TI (https : / / edbz.fa.us2.oraclecloud.com / hcmUI / CandidateExperience / en / sites / CX / pages / 4012)
Benefits that benefit you. We offer competitive pay and benefits designed to help you and your family live your best life. Your well-being is important to us.
About Texas Instruments
Texas Instruments Incorporated (Nasdaq : TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as each generation of innovation builds upon the last to make our technology more reliable, more affordable and lower power, making it possible for semiconductors to go into electronics everywhere. Learn more at TI.com .
Texas Instruments is an equal opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.
If you are interested in this position, please apply to this requisition.
Minimum Requirements :
Currently pursuing Masters or PhD degree in Electrical Engineering or related field with RF Power Amplifier design background and RF / mmWave IC design experience
Cumulative 3.0 / 4.0 GPA or higher
Preferred Qualifications :
Experience with GaN discrete modules and MMIC design
Experience with high efficiency and high peak to average ratio Power Amplifiers, including Doherty, LMBA, out-phasing and pulsed amplifier designs
Understanding of PA thermal and packaging constraints
Design of bias networks, control circuitry and digital predistortion
Knowledge of prototype development, lab testing and debug
Prior tape out experience of RFIC designs on CMOS, SiGe or III-V
