What are the responsibilities and job description for the Principal Scientist (SiGe and Ge Epitaxy Module), (APM), IME position at A*STAR Research Entities (A*STAR)?
Job Description :
- Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
- Improve baseline processes for high-quality SiGe and Ge epitaxy : control uniformity and thickness and minimize threading dislocation density.
- Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge / SiGe devices into Silicon photonic circuits.
- Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
- Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
- Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
- Provide technical support for technology transfer and process release requirements.
- Prepare technical presentations and papers for meetings, conferences and journals.
Requirements :
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